| PART |
Description |
Maker |
| 1N5919B 1N5919BRL 1N5930BRL 1N5940BRL 1N5921BRL 1N |
Zener 5.6V 3W 5%
Zener 16V 3.0W 5%
3 Watt DO-41 Surmetic-30 Zener Voltage Regulators
Zener 6.8V 3W 5%
Zener 47V 3.0W 5%
Zener 12V 3.0W 5%
Zener 56V 3.0W 5%
Zener 20V 3.0W 5%
Zener 33V 3.0W 5%
Zener Diode
Zener 180V 3.0W 5%
Zener 160V
Zener 200V 3.0W 5%
Zener 30V 3.0W 5%
Zener 62V 3.0W 5%
|
ON Semiconductor
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| NTE5061A NTE5062A NTE5063A NTE5064A NTE5065A NTE50 |
Zener diode, 1 watt, -5% tolerance. Nominal zener voltage Vz = 68V. Zener test current Izt = 3.7mA.
Zener Diode, 1 Watt ±5% Tolerance
Zener Diode, 1 Watt 【5% Tolerance
Zener Diode 1 Watt 5% Tolerance
Zener Diode, 1 Watt 5% Tolerance
Zener Diode / 1 Watt 5% Tolerance
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
Zener Diode, 1 Watt % Tolerance
10 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
NTE[NTE Electronics]
Mitsubishi Electric, Corp.
NTE Electronics, Inc.
|
| CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Switching Mode Power Supply Applications
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| HZ36L HZ6L HZ12C3L HZ7L HZ11L HZ12L HZ15L HZ16L HZ |
SWITCH TACT 6MM 100GF H=4.3MM
Silicon Epitaxial Planar Zener Diode for Low Noise Application
Diodes>Zener
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| TMP87C809BNG TMP87C409BNG TMP87C409BMG TMP87C809BM |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.2 to 7.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.0 to 7.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.3 to 7.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| H11G1SR2M H11G1SR2VM H11G1TM H11G1TVM H11G2M H11G1 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.4 to 4.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MIC5219-3.1BM5 MIC5219-2.5BM5 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.8 to 6.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.7 to 6.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.8 to 6.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 3.1 V FIXED POSITIVE LDO REGULATOR, 0.6 V DROPOUT, PDSO5
|
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
MICREL INC
|
| CLL4744A CLL4750A CLL4733A CLL4759A CLL4764A CLL47 |
1W Zener Diode(齐纳电压24V,1W齐纳二极 24 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 75 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 82 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1W Zener Diode(齐纳电压22V,1W齐纳二极 22 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1W Zener Diode(齐纳电压15V,1W齐纳二极
1W Zener Diode(齐纳电压5.6V,1W齐纳二极
1W Zener Diode(齐纳电压100V,1W齐纳二极
1W Zener Diode(齐纳电压33V,1W齐纳二极
1W Zener Diode(齐纳电压30V,1W齐纳二极
1W Zener Diode(齐纳电压27V,1W齐纳二极
1W Zener Diode(齐纳电压16V,1W齐纳二极
1.0W ZENER DIODE 5% TOLERANCE
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 1N4701-TAPE 1N4704C 1N4704A 1N4712D 1N4712C 1N4709 |
Diode Zener Single 14V 5% 500mW 2-Pin DO-35 Ammo
Diode Zener Single 17V 2% 500mW 2-Pin DO-35
Diode Zener Single 17V 5% 2-Pin DO-7
Diode Zener Single 28V 1% 500mW 2-Pin DO-35
Diode Zener Single 28V 2% 500mW 2-Pin DO-35
Diode Zener Single 24V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 1% 500mW 2-Pin DO-35
Diode Zener Single 15V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 2% 500mW 2-Pin DO-35
Diode Zener Single 22V 1% 500mW 2-Pin DO-35
Diode Zener Single 25V 1% 500mW 2-Pin DO-35
Diode Zener Single 13V 1% 500mW 2-Pin DO-35
Diode Zener Single 3V 1% 500mW 2-Pin DO-35
Diode Zener Single 39V 1% 500mW 2-Pin DO-35
Diode Zener Single 5.6V 1% 500mW 2-Pin DO-35
Diode Zener Single 8.2V 1% 500mW 2-Pin DO-35
|
New Jersey Semiconductor
|
| DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD Epitaxial Planar Type
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
